I. J. of Electrical & Electronics Research
Research Article | 
Designing of Tunnel FET and FinFET using Sentaurus TCAD and Finding their Characteristics
Author(s): Debashish Dash*, Shaik Abdul Rahiman, C. Pavitra Chowdary and Sagar Deo Singh
Published In : International Journal of Electrical and Electronics Research (IJEER) Volume 11, Issue 3
Publisher : FOREX Publication
Published : 20 September 2023
e-ISSN : 2347-470X
Page(s) : 754-759
Abstract
In this paper, a FinFET and Tunnel FET (TFET) are designed and implemented using Sentaurus TCAD. Due to numerous advantages, the TFET and FinFET have been proposed as a possible alternative to the conventional metal oxide semiconductor FET (MOSFET). A phenomenal performance-has been achieved using FinFET technology up to a 7 nm feature size. A detailed observation is made on FinFET and TFET regarding various effects such as short channel effects, quantum tunneling effect and characteristics like electric field, voltage and current, on-current, doping concentrations, energy band diagrams etc. FinFET technology can be used for designing different low power CMOS digital circuits and memory-based circuits. On the contrary, TFET based synthesized circuits are known for their high sensitivity, for which they are suitable for sensing applications, especially biosensors.
Keywords: Trigate Fin-FET, Tunnel FET, Doping concentrations, Energy band Diagram, Electric field.
Debashish Dash*, Assistant Professor, School of Electronics (SENSE), Vellore Institute of Technology, Vellore, India; Email: debashish.dash@vit.ac.in
Shaik Abdul Rahiman, Student, School of Electronics (SENSE), Vellore Institute of Technology, Vellore, India; Email: shaikabdul.rahiman2022@vitstudent.ac.in
C. Pavitra Chowdary, Student, School of Electronics (SENSE), Vellore Institute of Technology, Vellore, India; Email: pavithrachowdary.c2022@vitstudent.ac.in
Sagar Deo Singh, Student, School of Electronics (SENSE), Vellore Institute of Technology, Vellore, India; Email: sagardeosingh99@gmail.com
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[1] Karthik, K.R.N., Pandey, C.K., 2023, A Review of Tunnel Field-Effect Transistors for Improved ON-State Behaviour. Silicon 15, 1–23.
-
[2] Kujur, K.S., Rasheed, G. & Sridevi, S., 2022, InGaAs-Si Double Pocket-Dual Gate Tunnel FET Based 7T SRAM Design. Silicon 14, pp. 10087–10099.
-
[3] Singh A, Pandey CK, Nanda U., 2022, Performance analysis of silicon nanotube dielectric pocket Tunnel FET for reduced ambipolar conduction. Microelectronics Journal, 126:105512.
-
[4] Pandey C. K., Dash D. & Chaudhury S., 2020, Improvement in analog/RF performances of SOI TFET using dielectric pocket, International Journal of Electronics, 107:11, 1844-1860.
-
[5] Amrouch H., Santen Victor M. van, Pahwa Girish, Chauhan Yogesh, Jorg Henkel Jorg. 2020. 25th Asia and South Pacific Design Automation Conference (ASP-DAC), 637-644.
-
[6] Pandey C. K., Dash D. & Chaudhury S., 2019, Approach to suppress conduction in Tunnel FET using dielectric pocket, Micro & Nano Letters, 14:1, pp. 86-90.
-
[7] Goswami, R. and Bhowmick, B., 2019. Comparative analyses of circular gate TFET and heterojunction TFET for dielectric-modulated label-free biosensing. IEEE Sensors Journal, 19:21, pp.9600-9609.
-
[8] Pal, R.S., Sharma, S. and Dasgupta, S., 2017, March. Recent trend of FinFET devices and its challenges: A review, in 2017 Conference on Emerging Devices and Smart Systems (ICEDSS), pp. 150-154.
-
[9] Das, R., Goswami, R. and Baishya, S., 2016. Tri-gate heterojunction SOI Ge-FinFETs. Superlattices and Microstructures, 91, pp.51-61.
-
[10] Goswami, R. and Bhowmick, B., 2016. An analytical model of drain current in a nanoscale circular gate TFET. IEEE Transactions on Electron Devices, 64(1), pp.45-51.
-
[11] Jurczak, M., Collaert, N., Veloso, A., Hoffmann, T. and Biesemans, S., 2009, October. Review of FINFET technology, in 2009 IEEE international SOI conference, pp. 1-4.
-
[12] Ajaykumar Dharmireddy and Sreenivasarao Ijjada (2023), Performance Analysis of Variable Threshold Voltage (ΔVth) Model of Junction less FinTFET. IJEER 11(2), 323-327. DOI: 10.37391/IJEER.110211.