f An Enhanced Dynamic Collector Voltage and Current Clamping Method for Semiconductor in Electric Vehicles
FOREX Press I. J. of Electrical & Electronics Research
Support Open Access
  • Home/
  • IJEER-120327

Research Article |

An Enhanced Dynamic Collector Voltage and Current Clamping Method for Semiconductor in Electric Vehicles

Author(s): Hirenkumar Brahmbhatt* and Dr. Thangadurai N

Published In : International Journal of Electrical and Electronics Research (IJEER)        Volume 12, Issue 3

Publisher : FOREX Publication

Published : 15 August 2024

e-ISSN : 2347-470X

Page(s) : 946-950

DOI: https://doi.org/10.37391/IJEER.120327

Abstract

The electric drive and the batteries are the two primary parts of an electric vehicle (EV). In order to increase the availability and dependability of the semiconductors used in traction converters, this research focuses on a new approach of semiconductor protection. The IGBT overshoot in voltage during a short circuit situation was successfully reduced by a newly created active voltage and current clamping circuit. This innovative method restricts IGBT’s collector-emitter voltage during the turn-off event. As soon as the collector-emitter voltage of the IGBT crosses a predetermined threshold, the IGBT is partially turned on. The IGBT is then kept operating linearly, minimizing the rate at which the collector current falls and, consequently, and the collector-emitter over voltage. Simultaneously, during the short circuit, the current is monitored by a high precision hall-effect sensor allegro make IC, which detects over current and provides a fault output within 1µs. As a result of the combination of current and voltage monitoring, the likelihood of the IGBT failure is reduced drastically.

Keywords: Dynamic (active) voltage clamp, Current clamp, IGBT, Reliability, EV (Electric Vehicle), VCE (collector-emitter voltage), TVS (Transient Voltage Suppressor).




Hirenkumar Brahmbhatt*, Research Scholar, Department of Electrical Engineering Sankalchand Patel University, Visnagar, India; Email: hirelect@gmail.com

Dr. Thangadurai N, Rajarajeswari College of Engineering, Bangalore, Karnataka, India; Email: mrgoldspu2021@gmail.com

    [1] Dr. D. Graovac, Dr. A. Christmann, M. Münzer, “Power Semiconductors for Hybrid and Electric Vehicles”, 8th International Conference on Power Electronics - ECCE Asia, Jeju, Korea (South), 30 May 2011 - 03 June 2011; IEEE.
    [2] Naoki Sakurai, Koichi Yahata, “Gate Driver Integrated Circuit for High-Current and High- Speed Insulated-Gate Bipolar Transistors used in Hybrid Electric Vehicle and Electric Vehicle Inverters, 3rd International Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia), Kaohsiung, Taiwan, 03-07 June 2017; IEEE.
    [3] Katsumi Ishikawa, Koichi Suda*, Masataka Sasaki and Hideki Miyazaki, “A 600V Driver IC with New Short Protection in Hybrid Electric Vehicle IGBT Inverter System”, ISPSD '05, The 17th International Symposium on Power Semiconductor Devices and ICs, 2005., Santa Barbara, CA, 23-26 May 2005; IEEE.
    [4] Yan Zhou, Lihua Chen, Shuitao Yang, Fan Xu and Alam Khorshed, “A Low-Cost Gate Driver with Dynamic Turn-off Transient Control for HEV/EV Traction Inverter Application, 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), Tampa, FL, USA, 26-30 March 2017; IEEE.
    [5] Z. John Shen, Ichiro Omura, “Power Semiconductor Devices for Hybrid, Electric, and Fuel Cell Vehicles”, Proceedings of the IEEE 2007, Volume: 95, Issue: 4, April 2007, pp 778 – 789.
    [6] Anup Anurag, Sayan Acharya, Yos Prabowo, “Design Considerations and Development of an Innovative Gate Driver for Medium Voltage Power Devices with High dv/dt”, IEEE transactions on power electronics, Volume: 34, Issue: 6, June 2019, pp 5256 – 5267.
    [7] Joe Drobnik, Praveen Jain, “Electric and Hybrid Vehicle Power Electronics Efficiency, Testing and Reliability” World Electric Vehicle Journal. 2013; Volume 6, Issue 3:719-730.
    [8] Shaokun Zhang, Tao Fan, Xuhui Wen, “Research on High Power Density IGBT Driver Circuit, 2018 21st International Conference on Electrical Machines and Systems (ICEMS), Jeju, Korea, October 7-10, 2018; IEEE.
    [9] KangHo Jeong, KiJong Lee, JiWoong Jang, “The Optimized Gate Driver Design Techniques for IGBT Properties and Downsizing in Eco-Friendly Vehicle”, PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 10 – 12 May 2016; IEEE.

Hirenkumar Brahmbhatt and Dr. Thangadurai N (2024), An Enhanced Dynamic Collector Voltage and Current Clamping Method for Semiconductor in Electric Vehicles . IJEER 12(3), 946-950. DOI: 10.37391/IJEER.120327.