I. J. of Electrical & Electronics Research
Research Article | 
Performance Analysis of 9T SRAM using 180nm, 90nm, 65nm, 32nm, 14nm CMOS Technologies
Author(s) : Pushkar Praveen1 and Rakesh Kumar Singh2
Published In : International Journal of Electrical and Electronics Research (IJEER) Volume 10, Issue 2, Special Issue on IEEE-SD
Publisher : FOREX Publication
Published : 30 June 2022
e-ISSN : 2347-470X
Page(s) : 381-386
Abstract
The growing markets for low-power electronic devices energized by battery have created the need for smaller power-efficient chips to prevent frequent charging of the source. Nowadays the market capitalization of low-power appliances is expected to grow from USD 4.9 billion by 2022 to USD 7.9 billion by 2027 as per global forecast to 2027 published by markets. The main factor leading to growth of low power electronics market includes demand of energy saving components, miniaturization, and entry of IoT (Internet of Things) devices. In addition, increased investment by automotive OEM (Original Equipment Manufacturer) and governments to promote the adoption of electric vehicles is expected to create more market opportunities. In this digital era, memory components play a major role in power consumption and this incites the research interest these days. CMOS (Complementary Metal Oxide Semiconductor) technology is growing rapidly towards greater integration into a single chip, resulting to a decrease in chip sizes using less space. Speed and stability demand is also growing up. Combined chip density increases as downtime technology continues. Stability and reliability are an important issue for the static random access memory (SRAM) memory device. In this paper, the design and analysis of CMOS based 9T SRAM cell in a variety of technologies is presented. The main focus of this review paper is to analyze 9T SRAM to test performance on several CMOS technologies (180nm, 90nm, 65nm, 45nm, 32nm, 14nm) with the help of a predictable technology (PTM) file. The butterfly curve method is used to examine the consistency of the SRAM bit cell in terms of static noise margin (SNM). It is clearly shown in this paper that as it progresses from 180nm to 14nm the delay decreases with stability.
Keywords: SRAM, SNM, read access time, write access time, leakage power, RSNM, WSNM
Pushkar Praveen, Department of Electronics & Communication Engineering, UTU Dehradun, Dehradun, India; Email: pushkarpraveen11@gmail.com
Rakesh Kumar Singh, Department of Electronics & Communication Engineering, BTKIT, Dwarahat, India; Email: rksinghkec12@rediffmail.com
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Pushkar Praveen and Rakesh Kumar Singh (2022), Performance Analysis of 9T SRAM using 180nm, 90nm, 65nm, 32nm, 14nm CMOS Technologies. IJEER 10(2), 381-386. DOI: 10.37391/IJEER.100253.