Research Article |
Reliability Improvement of Grid Connected PV Inverter Considering Monofacial and Bifacial Panels Using Hybrid IGBT
Author(s): Srikanth S* and Dr. Byamakesh Nayak
Published In : International Journal of Electrical and Electronics Research (IJEER) Volume 12, Issue 2
Publisher : FOREX Publication
Published : 30 April 2024
e-ISSN : 2347-470X
Page(s) : 443-452
Abstract
The development of bifacial photovoltaics has led to significant advancements in solar energy. Unlike traditional solar panels, which only generate electricity from the front side, these panels capture the energy from the rear and front surfaces. Bifacial photovoltaics utilize a dual-sided absorption to capture the sunlight that falls on nearby structures and the ground. This technology helps boost their efficiency and makes them an economical and sustainable choice. Furthermore, the increased energy production from the rear side of bifacial panels may lead to higher voltage fluctuations, which affects the thermal stability of PV inverter. Nevertheless, PV inverter is regarded as critical component which affects the reliability performance. Hence in this paper reliability improvement methodology with hybrid IGBT is proposed for the PV inverter. The hybrid IGBT consists of Silicon (Si) IGBT and Silicon Carbide (SiC) Schottky diode. A test case of 3-kW Monofacial and Bifacial grid connected PV inverter system with various albedos is considered. Mission profile for one year at Hyderabad, India location is logged for the assessment. B10 lifetime is calculated for the proposed hybrid IGBT. The effectiveness of the proposed hybrid IGBT is evaluated in comparison with conventional IGBT. The proposed hybrid IGBT significantly improves the reliability performance of the PV inverter.
Keywords: IGBT
, PV Inverter
, Reliability
, Silicon (Si)
, Silicon Carbide (SiC)
.
Srikanth S*, Research scholar at School of Electrical Engineering, Kalinga Institute of Industrial Technology, Bhubaneshwar, Odisha; Email: srikanth269@gmail.com
Dr. Byamakesh Nayak, Professor and Dean, School of Electrical Engineering, Kalinga Institute of Industrial Technology, Bhubaneshwar, Odisha
-
[1] M. Vimala, G. Ramadas, M. Perarasi, A. M. Manokar, and R. Sathyamurthy, “A Review of Different Types of Solar Cell Materials Employed in Bifacial Solar Photovoltaic Panel,” Energies, vol. 16, no. 8. 2023, doi: 10.3390/en16083605. [CrossRef]
-
[2] J. Johnson and S. Manikandan, “Experimental study and model development of bifacial photovoltaic power plants for Indian climatic zones,” Energy, vol. 284, 2023, doi: 10.1016/j.energy.2023.128693. [CrossRef]
-
[3] M. Mustapha et al., “Mathematical modeling and experimental validation of bifacial photovoltaic–thermal system with mirror reflector,” Case Stud. Therm. Eng., vol. 43, 2023, doi: 10.1016/j.csite.2023.102800. [CrossRef]
-
[4] C. Bai and M. Kim, “Single Power-Conversion Active-Clamped AC/DC Converter Employing Si/SiC Hybrid Switch,” IEEE Trans. Ind. Electron., vol. 71, no. 2, 2024, doi: 10.1109/TIE.2023.3262889. [CrossRef]
-
[5] X. Deng et al., “A Hybrid-Channel Injection Enhanced Modulation 4H-SiC IGBT Transistors with Improved Performance,” IEEE Trans. Electron Devices, vol. 69, no. 8, 2022, doi: 10.1109/TED.2022.3183555. [CrossRef]
-
[6] H. Qin, S. Xie, Q. Xun, F. Zhang, Z. Xu, and L. Wang, “An optimized parameter design method of SiC/Si hybrid switch considering turn-off current spike,” Energy Reports, vol. 8, 2022, doi: 10.1016/j.egyr.2022.08.029. [CrossRef]
-
[7] Y. Wang, M. Chen, and D. Xu, “Design of Low Inductance SiC-MOS/Si-IGBT Hybrid Module for PV Inverters,” IEEE Open J. Power Electron., vol. 3, 2022, doi: 10.1109/OJPEL.2022.3224140. [CrossRef]
-
[8] T. Yin, L. Lin, C. Xu, D. Zhu, and K. Jing, “A Hybrid Modular Multilevel Converter Comprising SiC MOSFET and Si IGBT With Its Specialized Modulation and Voltage Balancing Scheme,” IEEE Trans. Ind. Electron., vol. 69, no. 11, 2022, doi: 10.1109/TIE.2021.3118372. [CrossRef]
-
[9] H. Liu, T. Zhao, and X. Wu, “Performance Evaluation of Si/SiC Hybrid Switch-Based Three-Level Active Neutral-Point-Clamped Inverter,” IEEE Open J. Ind. Appl., vol. 3, 2022, doi: 10.1109/OJIA.2022.3179225. [CrossRef]
-
[10] C. Liu et al., “Hybrid SiC-Si DC-AC Topology: SHEPWM Si-IGBT Master Unit Handling High Power Integrated with Partial-Power SiC-MOSFET Slave Unit Improving Performance,” IEEE Trans. Power Electron., vol. 37, no. 3, 2022, doi: 10.1109/TPEL.2021.3114322. [CrossRef]
-
[11] H. Liu, J. Zhou, T. Zhao, and X. Xu, “Si IGBT and SiC MOSFET Hybrid Switch-Based Solid State Circuit Breaker for DC Applications,” in 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022, 2022, doi: 10.1109/ECCE50734.2022.9948172. [CrossRef]
-
[12] L. Tan, P. Liu, C. She, P. Xu, L. Yan, and H. Quan, “Heat Dissipation Characteristics of IGBT Module Based on Flow-Solid Coupling,” Micromachines, vol. 13, no. 4, 2022, doi: 10.3390/mi13040554. [CrossRef]
-
[13] Z. Zhu, C. Tu, B. Xiao, L. Long, F. Jiang, and S. Liu, “Research on Characteristics of SiC FET/Si IGBT and SiC MOSFET/Si IGBT Hybrid Switches,” in 2022 4th International Conference on Smart Power and Internet Energy Systems, SPIES 2022, 2022, doi: 10.1109/SPIES55999.2022.10082437. [CrossRef]
-
[14] Z. Li et al., “Dynamic Gate Delay Time Control of Si/SiC Hybrid Switch for Loss Minimization in Voltage Source Inverter,” IEEE J. Emerg. Sel. Top. Power Electron., vol. 10, no. 4, 2022, doi: 10.1109/JESTPE.2021.3137332. [CrossRef]
-
[15] C. L. Kahraman, S. Lakshmeesha, S. Rosado, and T. Wijekoon, “Impact of forward recovery effects in different Si-IGBT technologies used in hybrid Si-IGBT, SiC-MOSFET based ANPC topology,” in Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, 2022, doi: 10.1109/APEC43599.2022.9773782. [CrossRef]
-
[16] A. Deshpande, R. Paul, A. Imran Emon, Z. Yuan, H. Peng, and F. Luo, “Si-IGBT and SiC-MOSFET hybrid switch-based 1.7 kV half-bridge power module,” Power Electron. Devices Components, vol. 3, 2022, doi: 10.1016/j.pedc.2022.100020. [CrossRef]
-
[17] D. Woldegiorgis and H. A. Mantooth, “Precise Electro-thermal Power Loss Model of a Three-level ANPC Inverter with Hybrid Si/SiC Switches,” Chinese J. Electr. Eng., vol. 8, no. 3, 2022, doi: 10.23919/CJEE.2022.000027. [CrossRef]
-
[18] K. Jing, L. Lin, T. Yin, and Q. Huang, “Flying-capacitor MMC Topology Combining Si IGBT and SiC MOSFET with Its Modulation Strategy,” Gaodianya Jishu/High Volt. Eng., vol. 48, no. 10, 2022, doi: 10.13336/j.1003-6520.hve.20210777.
-
[19] H. Liu, T. Zhao, X. Xu, and J. Zhou, “Conduction Time Variation-Based Active Thermal Control Method for Si and SiC Hybrid Switch,” in 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022, 2022, doi: 10.1109/ECCE50734.2022.9947678. [CrossRef]
-
[20] F. Kayser, F. Pfirsch, F. J. Niedernostheide, R. Baburske, and H. G. Eckel, “Novel Si-SiC hybrid switch and its design optimization path,” in Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2022, vol. 2022-May, doi: 10.1109/ISPSD49238.2022.9813676. [CrossRef]
-
[21] Y. Ding et al., “Degradation of Si/SiC Hybrid Switch under AC power cycle,” in Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, 2022, doi: 10.1109/APEC43599.2022.9773458. [CrossRef]
-
[22] D. Yıldırım, M. H. Akşit, I. Çadırcı, and M. Ermiş, “All-SiC Traction Converter for Light Rail Transportation Systems: Design Methodology and Development of 165 kVA Prototype,” Electron., vol. 11, no. 9, 2022, doi: 10.3390/electronics11091438. [CrossRef]
-
[23] S. Wang, Z. Xia, H. Duan, C. Ma, S. Lu, and S. Li, “A Si IGBT and SiC MOSFET Hybrid Full-Bridge Inverter and Its Modulation Scheme,” in 2022 International Conference on Electrical Machines and Systems, ICEMS 2022, 2022, doi: 10.1109/ICEMS56177.2022.9983311. [CrossRef]
-
[24] N. Rigogiannis, A. Kotsidimou, I. Arzanas, C. Kyritsi, and N. Papanikolaou, “Comparative Performance Study of Hybrid Si/SiC Insulated-Gate Bipolar Transistors,” in 2022 IEEE 7th Forum on Research and Technologies for Society and Industry Innovation, RTSI 2022, 2022, doi: 10.1109/RTSI55261.2022.9905217. [CrossRef]