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Research Article |

Impact on Breakdown Voltage for AlGaN Channel E-HEMT Device used with the DC Boost Converter Circuit

Author(s): Godwinraj D1, Godfrey D2, P. Sundararaman3 and V. Nandagopal4

Published In : International Journal of Electrical and Electronics Research (IJEER)        Volume 13, Issue 1

Publisher : FOREX Publication

Published : 30 March 2025

e-ISSN : 2347-470X

Page(s) : 50-54

DOI: https://doi.org/10.37391/IJEER.130108

Abstract

In this paper, the impact on breakdown performance is demonstrated by the coupled operation of the E-mode AlGaN Channel HEMT for DC Boost Converter Circuit. CAD optimization of individual devices on the process and E-mode HEMT device level affects the circuit performance DC Boost Converter Circuit. The field plate length of Fp=2.7 µm results in the steady current at the voltage of VBV=790 V, whereas the field plate length of 3.6 µm results breakdown voltage of more than 1k volts. Circuit voltages at various nodes, Current in HEMT and SBD for switching cycle, and also the power dissipation is evaluated for two various doping concentrations 3E15(/cm3) and 9E15(/cm3). As a result, the dependency of power losses in the circuit on the physical parameters of the process stage is demonstrated.

Keywords: AlGaN Channel HEMT, DC Boost converter, Breakdown Voltage (VBV) .




Godwinraj D, 1Department of Electronics and Communication Engineering, Amal Jyothi College of Engineering, Kerala, India;

Godfrey D, Department of Electronics and Communication Engineering, Dayananda Sagar University, Bengaluru, Karnataka, India;

P. Sundararaman, EECEC Department, GITAM University, Bangalore-South India;

V. Nandagopal, Department of Electrical and Electronics Engineering, School of Engineering, Mohan Babu University, Tirupati, Andhra Pradesh, India

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Godwinraj D, Godfrey D, P. Sundararaman, V. Nandagopal (2025), Impact on Breakdown Voltage for AlGaN Channel E-HEMT Device used with the DC Boost Converter Circuit. IJEER 13(1), 50-54. DOI: 10.37391/IJEER.130108.