Research Article | ![]()
A Reconfigurable Single-Electron Threshold-Logic Reversible Module for Ultra-Low-Power Nanoelectronics
Author(s): M. M. Abutaleb1,2*
Published In : International Journal of Electrical and Electronics Research (IJEER) Volume 14, Issue 1
Publisher : FOREX Publication
Published : 10 March 2026
e-ISSN : 2347-470X
Page(s) : 104-109
Abstract
As CMOS technology approaches its physical scaling limits, the semiconductor industry is actively seeking alternative technologies to sustain Moore's Law. This paper proposes a novel Reversible Logic Module (RLM) based on Single-Electron Tunneling (SET) technology and Threshold-Logic Gates (TLGs) for ultra-low power and high-density nanoelectronics circuits. The RLM is reconfigurable and capable of implementing fundamental reversible gates such as Toffoli, Feynman, Fredkin, and Peres gates, which are essential for reversible computing. The design is validated through extensive simulations using single-electronics simulators, demonstrating 0.25 aJ per operation and a delay of 10 ps. Unlike previous SET–TLG logic cells and memory structures, the proposed module introduces a unified, non-gate-bound reversible architecture capable of dynamically achieving multiple reversible functions using a fixed hardware topology. Comparative analysis against CMOS, FinFET, Memristor, and QCA technologies highlights RLM’s superior energy efficiency and scalability. The paper also explores potential applications in quantum arithmetic logic units (ALUs) and neuromorphic systems, supported by recent advancements in 2D materials and spintronics.
Keywords: Nanoelectronics, SET technology, Threshold logic, Reversible logic, Low-power circuits.
M. M. Abutaleb, Unit of Scientific Research, Applied College, Qassim University, Buraydah 51425, Saudi Arabia; Email: m.abutaleb@qu.edu.sa
M. M. Abutaleb ,Department of Electronics and Communications Engineering, Capital University (formerly Helwan University), Cairo 11792, Egypt; Email: mustafa_abotaleb@h-eng.helwan.edu.eg
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